Electric field modulated topological magnetoelectric effect in Bi2Se3
نویسندگان
چکیده
منابع مشابه
Topological magnetoelectric effect decay.
We address the influence of realistic disorder and finite doping on the effective magnetic monopole induced near the surface of an ideal topological insulator (TI) by currents that flow in response to a suddenly introduced external electric charge. We show that when the longitudinal conductivity σ(xx)=g(e(2)/h)≠0, the apparent position of a magnetic monopole initially retreats from the TI surfa...
متن کاملTopological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors
Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22033, Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, School of Physics, Astronomy, and Computational Sciences, George Mason University, Fairfax, VA 22033, Materials Science and Engineering Division, National Institute of Standards an...
متن کاملOrbital magnetoelectric coupling at finite electric field
We extend the band theory of linear orbital magnetoelectric coupling to treat crystals under finite electric fields. Previous work established that the orbital magnetoelectric response of a generic insulator at zero field comprises three contributions that were denoted as local circulation, itinerant circulation, and Chern-Simons. We find that the expression for each of them is modified by the ...
متن کاملOptical characterization of Bi2Se3 in a magnetic field: Infrared evidence for magnetoelectric coupling in a topological insulator material
A. D. LaForge,1,2,* A. Frenzel,1,† B. C. Pursley,1 Tao Lin,3 Xinfei Liu,3 Jing Shi,3 and D. N. Basov1 1Department of Physics, University of California, San Diego, La Jolla, California 92093, USA 2Department of Physics, University of California, Santa Cruz, Santa Cruz, California 95064, USA 3Department of Physics, University of California, Riverside, Riverside, California 92521, USA Received 9 D...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2018
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.98.121106